A novel dilute antimony channel In0.2Ga0.8AsSb/ GaAs HEMT

IEEE Electron Device Letters

Volumn 28, Issue 2, 2007, Pages 96-99

  Su, Ke Hua ^a   Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Wu, Tsung Yeh ^a   Wu, Yue Han ^c   Chang, Li ^c   Hsiao, Ru Shang ^c   Chen, Jen Fang ^c   Chi, Wei Chi ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Dilute channel; InGaAsSb GaAs high electron mobility transistor (HEMT); Surfactant

Indexed keywords

CURRENT DENSITY; DRAIN CURRENT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR QUANTUM WELLS; SURFACE PROPERTIES; TRANSCONDUCTANCE;

DILUTE CHANNEL; DRAIN SATURATION CURRENT DENSITY; SURFACE CHARACTERIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847395299     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.889047     Document Type: Article

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