High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65 Ga0.35As metamorphic HEMT

IEEE Electron Device Letters

Volumn 26, Issue 2, 2005, Pages 59-61

  Hsu, Wei Chou ^a   Chen, Yeong Jia ^a   Lee, Ching Sung ^b   Wang, Tzong Bin ^a   Lin, Yu Shyan ^c   Wu, Chang Luen ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^d Transcom Inc   (Taiwan)

Author keywords

High temperature; Metamorphic; Metamorphic high electron mobility transistor (MHEMT); Thermal stability

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; HIGH TEMPERATURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY; TRANSCONDUCTANCE;

HIGH TEMPERATURE DEVICE; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (MHEMT); OSCILLATION FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 13444251481     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.841447     Document Type: Article

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