A comparison of MBE- and MOCVD-grown GaInNAs

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 392-398

  Ptak, A J ^a   Johnston, S W ^a   Kurtz, Sarah ^a   Friedman, D J ^a   Metzger, W K ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

A1. Impurities; A1. Point defects; A3. Metalorganic chemical vapor deposition; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL IMPURITIES; MAGNETIC RESONANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS; X RAY DIFFRACTION ANALYSIS;

MATERIAL QUALITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037381458     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02201-7     Document Type: Conference Paper

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