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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 1158-1162

Molecular beam epitaxy growth of GaAsN layers with high luminescence efficiency

(8) Kovsh, A R a,b Wang, J S a Wei, L a Shiao, R S a Chi, J Y a Volovik, B V b Tsatsul'nikov, A F b Ustinov, V M b

a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

b IOFFE INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; CRYSTALS; DEFECTS; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTOR QUANTUM WELLS;

NITROGEN PLASMAS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035998558 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1473176 Document Type: Conference Paper

Times cited : (43)

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