Correlation between optical and electrical properties in In 0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Cui, L J ^a   Zeng, Y P ^a   Wang, B Q ^a   Zhu, Z P ^a   Guo, S L ^b   Chu, J H ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRON TRANSITIONS; HALL EFFECT; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS;

GALLIUM ARSENIDE SUBSTRATES; HEAVY-HOLE SUBBAND; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); SILICON DELTA-DOPING CONCENTRATIONS;

SEMICONDUCTING INDIUM;

EID: 33747351575     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2222404     Document Type: Article

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