Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts

Solid-State Electronics

Volumn 54, Issue 3, 2010, Pages 279-282

  Chen, Li Yang ^a   Cheng, Shiou Ying ^b   Huang, Chien Chang ^a   Chen, Tzu Pin ^a   Tsai, Tsung Han ^a   Liu, Yi Jung ^a   Chen, Tai You ^a   Hsu, Chi Hsiang ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL ILAN UNIVERSITY   (Taiwan)

Author keywords

Non annealed (NA); Ohmic recess (OR)

Indexed keywords

DEVICE PERFORMANCE; HIGH TEMPERATURE; INALAS/INGAAS; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE ELECTRONIC DEVICES; ON-RESISTANCE; OPERATING REGIMES; OPERATING TEMPERATURE; PARASITIC RESISTANCES; SATURATION DRAIN CURRENT; STABILITY PERFORMANCE; SUPERIOR MICROWAVE; TEMPERATURE DEPENDENT;

ANNEALING; DRAIN CURRENT; ELECTRIC CONTACTORS; ELECTRON DEVICES; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVES; OHMIC CONTACTS; TEMPERATURE;

AMORPHOUS FILMS;

EID: 76449097684     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.10.009     Document Type: Article

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