Thermal stability of InP-based high electron mobility transistor epitaxial wafers

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 4260-4267

  Sugiyama, Hiroki ^a   Watanabe, Kazuo ^a   Yokoyama, Haruki ^a   Kobayashi, Takashi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FLUORINE; HALL EFFECT; NITROGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SILICON WAFERS; THERMODYNAMIC STABILITY;

CARRIER-SUPPLY LAYERS (CSL);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037394439     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1560572     Document Type: Article

References (22)

1. T. Suemitsu, T. Tshii, H. Yokoyama, T. Enoki, Y. Ishii, and T. Tamamura, Jpn. J. Appl. Phys., Part 2 38, L154 (1999).
2. M. Yoneyama, Y. Miyamoto, T. Otsuji, A. Hirano, H. Kikuchi, T. Ishibashi, and H. Miyazawa, Tech. Dig. Optical Communication Conf. (OFC), San Diego, CA, 1999, p. 128.
3. A. Wakita, H. Rohdin, V. Robbins, N. Moll, C. Y. Su, A. Nagy, and D. Basile, Jpn. J. Appl. Phys., Part 1 38, 1186 (1999).
4. R. Branchard, J. A. del Alamo, S. B. Adams, P. C. Chao, and A. Cornet, IEEE Electron Device Lett. 20, 393 (1999).
5. M. Dammann, M. Chertouk, W. Jantz, K. Köhler, K. H. Schmidt, and G. Weimann, Electron. Lett. 34, 2064 (1998).
6. T. Enoki, H. Ito, and Y. Ishii, Solid-State Electron. 41, 1651 (1997).
7. T. Suemitsu, H. Yokoyama, and Y. Ishii, Electron. Lett. 35, 2141 (1999).
8. N. Hayafuji, Y. Yamamoto, N. Yoshida, T. Sonoda, S. Takamiya, and S. Mitsui, Appl. Phys. Lett. 66, 863 (1995).
9. N. Shigekawa, T. Enoki, T. Furuta, and H. Ito, Proceedings of the 8th International Conference on InP and Related Materials (IEEE, Schwäbisch, Gmünd, 1996), p. 681.
10. K. Watanabe and H. Yokoyama, J. Appl. Phys. 89, 1696 (2001).
11. K. Watanabe and H. Yokoyama, Appl. Phys. Lett. 76, 973 (2000).
12. A. Wakejima, K. Onda, Y. Ando, A. Fujihara, E. Mizuki, T. Nakayama, H. Miyamoto, and M. Kuzuhara, J. Appl. Phys. 81, 1311 (1997).
13. Y. Yamamoto, N. Hayafuji, N. Fujii, K. Kadoiwa, N. Yoshida, T. Sonoda, and S. Takamiya, J. Electron. Mater. 25, 685 (1996).
14. K. Watanabe and H. Yokoyama, J. Appl. Phys. 86, 4333 (1999).
15. H. Sugiyama, H. Yokoyama, and K. Wada, Jpn. J. Appl. Phys., Part 1 38, 1158 (1999).
16. J. M. Gipérez, J. S. Sánchez-Rojas, E. Muñoz, E. Calleja, J. P. R. David, G. Hill, and J. Castagné, Appl. Phys. Lett. 61, 1225 (1992).
17. A. Taguchi, T. Ohno, and T. Sasaki, Phys. Rev. B 62, 1821 (2000).
18. N. Watanabe, T. Nittono, and K. Watanabe, Appl. Phys. Lett. 61, 1945 (1992).
19. K. Kiziloglu, M. M. Hashemi, L. W. Yin, Y. Jing, P. M. Petroff, U. K. Mishra, and A. S. Brown, J. Appl. Phys. 72, 3798 (1992).
20. L. Aina and M. Mattingly, Appl. Phys. Lett. 51, 1637 (1987).
21. P. Souza, E. V. K. Rao, and F. Alexandre, J. Appl. Phys. 64, 444 (1988).
22. G. Salviati, N. Armani, P. Cova, G. Meneghesso, and E. Zanoni, Mater. Sci. Eng., B 80, 289 (2001).