Comparative study of In0.52Al0.48As/In xGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Semiconductor Science and Technology

Volumn 21, Issue 6, 2006, Pages 781-785

  Huang, Dong Hai ^a   Hsu, Wei Chou ^a   Lin, Yu Shyan ^b   Wu, Yue Huei ^c   Hsu, Rong Tay ^c   Huang, Juin Chin ^a   Liao, Yin Kai ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^c Land Mark Optoelectronics Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRON MOBILITY; ELECTRONS; ENERGY GAP; FABRICATION; HETEROJUNCTIONS; RADIOFREQUENCY SPECTROSCOPY; TRANSISTORS;

HIGH-ELECTRON-MOBILITY TRANSISTORS (HEMT); INVERSELY GRADED CHANNEL (IGC); SYMMETRICALLY GRADED CHANNEL (SGC);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33646734481     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/6/012     Document Type: Article

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