High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 262, Issue 1-4, 2004, Pages 84-88

  Wang, J S ^a   Kovsh, A R ^a,b   Hsiao, R S ^a,c   Chen, L P ^a,d   Chen, J F ^c   Lay, T S ^d   Chi, J Y ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b IOFFE INSTITUTE   (Russian Federation)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION; COMPUTER SIMULATION; CURVE FITTING; DIFFRACTOMETERS; LIGHT EMISSION; LOW TEMPERATURE EFFECTS; OPTICAL COMMUNICATION; PHASE SEPARATION; PHOTOLUMINESCENCE; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

PLASMA LIGHT INTENSITY; SINGLE QUANTUM WELLS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0842265245     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.053     Document Type: Article

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