On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1522-1530

  Liu, Wen Chau ^a,b   Yu, Kuo Hui ^b   Lin, Kun Wei ^b   Tsai, Jung Hui ^c   Wu, Cheng Zu ^b   Lin, Kuan Po ^b   Yen, Chih Hung ^b  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL KAOHSIUNG NORMAL UNIVERSITY   (Taiwan)

Author keywords

Camel like; Heterostructure channel; High breakdown; Low leakage; Off state

Indexed keywords

CAMEL LIKE FIELD EFFECT TRANSISTOR; INDIUM GALLIUM PHOSPHIDE;

ELECTRIC BREAKDOWN; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

GATES (TRANSISTOR);

EID: 0035423807     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936502     Document Type: Article

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