OMEN an atomistic and full-band quantum transport simulator for post-CMOS nanodevices

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Volumn , Issue , 2008, Pages 354-357

  Luisier, Mathieu ^a   Klimeck, Gerhard ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; COMPUTER AIDED DESIGN; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SUPERCOMPUTERS; THREE DIMENSIONAL;

BINDING MODELS; DINGER EQUATIONS; MECHANICAL MODELS; NANO DEVICES; QUANTUM TRANSPORT SIMULATORS; SIMULATION DOMAINS; TRANSISTOR STRUCTURES;

QUANTUM CHEMISTRY;

EID: 55349133822     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2008.110     Document Type: Conference Paper

References (10)

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2. S. D. Suk et al., "Investigation of nanowire size dependency on TSNWFET", IEDM Tech. Dig.2007, pp. 891-894, 2007.
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4. * Tight-Binding Formalism: from Boundary Conditions to Strain Calculations", Phys. Rev. B, vol. 74, 205323, 2006.
5. M. Luisier and A. Schenk, "Atomistic Simulation of Nanowire Transistors", J. of Comp. and Theoretical Nanoscience, vol. 5, pp. 1031-1045, 2008.
6. M. Luisier, A. Schenk, and W. Fichtner, "Three-Dimensional Full-Band Simulations of Si Nanowire Transistors", IEDM Tech. Dig. 2006, pp. 811-814, 2006.
7. M. Luisier, A. Schenk, and W. Fichtner, "Full-band atomistic study of source-to-drain tunneling in Si nanowire transistors", Proc. of Int. Conf. on Simulation of Semiconductor Processes and Devices (SIS-PAD), pp. 221-224, 2007.
8. * empirical tight-binding model applied to a Si and Ge parametrization", Phys. Rev. B, vol. 69, 115201, 2004.
9. T. B. Boykin, M. Luisier, A. Schenk, N. Kharche, and G. Klimeck, "The electronic structure and transmission characteristics of disordered AlGaAs nanowires, IEEE Trans, on Nanotech. vol. 6, pp. 43-47 2007.
10. M. Luisier and G. Klimeck, "A multi-level parallel approach to the quantum mechanical simulation of nanoelectronic devices", unpublished.