Self-consistent simulations of nanowire transistors using atomistic basis sets

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 217-220

  Neophytou, Neophytos ^a   Paul, Abhijeet ^a   Lundstrom, Mark S ^a   Klimeck, Gerhard ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONIC STRUCTURE; NANOWIRES;

ALTERNATIVE STRUCTURE; ELECTRONIC STRUCTURE CALCULATIONS; NANOWIRE TRANSISTORS; NEAREST NEIGHBORS; NON-PLANAR DEVICES; SELF-CONSISTENT SIMULATIONS; STRONG CONFINEMENT; TIGHT BINDING MODEL;

SEMICONDUCTOR DEVICES;

EID: 44949171518     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_51     Document Type: Conference Paper

References (3)

1. G. Klimeck, F. Oyafuso, T. B. Boykin, R. C., Bowen, and P. von Allmen. Computer Modeling in Engineering and Science (CMES) Volume 3, No. 5 pp 601-642 (2002).
2. A. Rahman, J. Guo, S. Datta, and M. Lundstrom, IEEE TED, 50. pp. 1853-1864, 2003.
3. Bandstructure lab on nanoHUB.org (https://www.nanohub.org/tools/ band5trlab/)