SCOPUS 정보 검색 플랫폼

Volumn 87, Issue 10, 2010, Pages 2014-2018

Effects of nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices

(5) Fu, Chung Hao a Chang Liao, Kuei Shu a Wang, Tien Ko a Tsai, W F b Ai, C F b

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b Institution of Nuclear Energy Research (Taiwan)

Author keywords

HfOxNy; High k gate dielectric; Nitridation treatment; Plasma immersion ion implantation

Indexed keywords

GATE DIELECTRICS; ION IMPLANTATION; IONS; MOS DEVICES; NITRIDATION; NITROGEN; NITROGEN PLASMA; PLASMA APPLICATIONS;

ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; HFOXNY; HIGH- K GATE DIELECTRICS; NITRIDATION TREATMENTS; PLASMA IMMERSION ION IMPLANTATION; STABILITY AND RELIABILITIES; THREE ORDERS OF MAGNITUDE;

HIGH-K DIELECTRIC;

EID: 77955431790 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2009.12.082 Document Type: Article

Times cited : (3)

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