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Journal of Applied Physics

Volumn 90, Issue 4, 2001, Pages 1911-1919

Hydrogen induced positive charge generation in gate oxides

(6) Zhang, J F a Zhao, C Z a Groeseneken, G b Degraeve, R b Ellis, J N c Beech, C D c

a LIVERPOOL JOHN MOORES UNIVERSITY (United Kingdom)

b IMEC (Belgium)

c Mitel Semiconductor (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035881415 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1384860 Document Type: Article

Times cited : (34)

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