HfTiAlO dielectric as an alternative high- k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

Applied Physics Letters

Volumn 90, Issue 8, 2007, Pages

  Lu, N ^a   Li, H J ^b   Peterson, J J ^b   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONDUCTION BANDS; CUBIC STRUCTURES;

CRYSTALLIZATION; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; PERMITTIVITY;

MOS DEVICES;

EID: 33847209172     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2396891     Document Type: Article

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