Effect of low fluence laser annealing on ultrathin Lu2 O3 high- k dielectric

Applied Physics Letters

Volumn 91, Issue 9, 2007, Pages

  Darmawan, P ^a   Lee, P S ^a   Setiawan, Y ^a   Ma, J ^a   Osipowicz, T ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LASER BEAM EFFECTS; LASER PULSES; PERMITTIVITY; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

INTERFACIAL LAYER; IONIC CONTRIBUTION; IONIC POLARIZABILITY; QUANTUM MECHANICAL TUNNELING;

DIELECTRIC FILMS;

EID: 34548445485     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2771065     Document Type: Article

References (17)

1. International Technology Roadmap for Semiconductors, 2005.
2. S. Ohmi, C. Kobayashi, I. Kashiwagi, C. Ohshima, H. Ishiwara, and H. Iwai, J. Electrochem. Soc. 150, F134 (2003).
3. S. Ohmi, M. Takeda, H. Ishiwara, and H. Iwai, J. Electrochem. Soc. 151, G279 (2004).
4. P. Darmawan, C. L. Yuan, and P. S. Lee, Solid State Commun. 138, 571 (2006).
5. G. Scarel, E. Bonera, C. Weimer, G. Tallarida, S. Spiga, M. Fanciulli, I. L. Fedushkin, H. Schumann, Y. Lebedinskii, and A. Zenkevich, Appl. Phys. Lett. 85, 630 (2004).
6. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
7. M. Hernandez, J. Venturini, D. Zahorski, J. Boulmer, D. Debarre, G. Kerrien, T. Sarnet, C. Laviron, M. N. Semeria, D. Camel, and J. L. Santailler, Appl. Surf. Sci. 209, 345 (2003).
8. Y. Setiawan, P. S. Lee, K. L. Pey, X. C. Wang, and G. C. Lim, Appl. Phys. Lett. 88, 113108 (2006).
9. P. S. Lee, K. L. Pey, F. L. Chow, L. J. Tang, C. H. Tung, X. C. Wang, and G. C. Lim, IEEE Electron Device Lett. 24, 237 (2006).
10. Y. F. Chong, K. L. Pey, A. T. S. Wee, M. O. Thompson, C. H. Tung, and A. See, Appl. Phys. Lett. 81, 3786 (2002).
11. R. K. Singh and J. Narayan, Mater. Sci. Eng., B 3, 217 (1989).
12. T. Wiktorczyk and J. Poprawska, Tenth International Symposium on Electrets, IEEE, NY, 22-24 Sept, 1999, p. 709
13. A. A. DemKov, and, A. Navrotsky, (editors), Materials Fundamentals of Gate Dielectrics (Springer, New York, 2004), pp. 1-4.
14. O. Baldus and R. Waser, Appl. Phys. A: Mater. Sci. Process. 80, 1553 (2005).
15. H. J. Osten, E. Bugiel, and A. Fissel, Solid-State Electron. 47, 2161 (2003).
16. R. Lo Nigro, R. Toro, G. Malandrino, V. Raineri, and I. L. Fragala, Proceedings of the 33rd conference of IEEE ESSDERC, IEEE, New York, 16-18 Sept, 2003, p. 375.
17. J. Kwo, M. Hong, B. Busch, D. A. Muller, Y. J. Chabal, A. R. Kortan, J. P. Mannaerts, B. Yang, P. Ye, H. Gossmann, A. M. Sergent, K. K. Ng, J. Bude, W. H. Schulte, E. Garfunkel, and T. Gustafsson, J. Cryst. Growth 251, 645 (2003).