Origin of frequency dispersion in high-k dielectrics

Proceedings - Electrochemical Society

Volumn PV 2008-1, Issue , 2008, Pages 20-26

  Taechakumput, P ^a   Zhao, C Z ^a   Taylor, S ^a   Werner, M ^a   Chalker, P R ^a   Gaskell, J M ^a   Jones, A C ^a   Drobnis, M ^b  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b NXP Semiconductor   (United Kingdom)

Author keywords

Dielectric relaxation; Frequency dependence; Frequency dispersion; High k dielectrics; LaxZr 1 xO2; LaAlo3; ZrO2

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DISPERSION (WAVES); ELECTRIC CONDUCTIVITY; ELECTRIC EQUIPMENT; ENERGY STORAGE; LITHOGRAPHY; METALS; NONMETALS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SILICON; TECHNOLOGY; THICK FILMS;

BACK CONTACTS; CAPACITANCE-VOLTAGE MEASUREMENTS; DIELECTRIC PERMITTIVITIES; DIELECTRIC RELAXATION; DUAL-FREQUENCY; FREQUENCY DEPENDENCE; FREQUENCY DEPENDENCES; FREQUENCY DISPERSION; FREQUENCY DISPERSIONS; HIGH-K DIELECTRICS; INTERFACIAL LAYER; INTERNATIONAL CONFERENCES; LAXZR 1-XO2; LAALO3; METAL CONTACTS; SEMICONDUCTOR TECHNOLOGIES; SERIES RESISTANCE; SILICON SUBSTRATES; ZRO2;

MOS CAPACITORS;

EID: 52349117918     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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