Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1626-1628

  Tsoutsou, D ^a   Apostolopoulos, G ^b   Galata, S ^a   Tsipas, P ^a   Sotiropoulos, A ^a   Mavrou, G ^a   Panayiotatos, Y ^a   Dimoulas, A ^a  

^a INSTITUTE OF MATERIALS SCIENCE   (Greece)

^b INSTITUTE OF NUCLEAR TECHNOLOGY AND RADIATION PROTECTION   (Greece)

Author keywords

Ge doping; High k dielectrics; Tetragonal ZrO2 phase; Zirconium oxide

Indexed keywords

ATOMIC OXYGEN BEAM DEPOSITION; GE CONCENTRATIONS; GE DOPING; HIGH-K DIELECTRICS; HIGH-TEMPERATURE ANNEALING; MAXIMUM VALUES; POST-DEPOSITION; STRUCTURAL PHASE TRANSFORMATIONS; TETRAGONAL DISTORTION; TETRAGONAL PHASE; TETRAGONAL ZRO2 PHASE; ZIRCONIUM OXIDE;

CHEMICAL MODIFICATION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); OXYGEN; PERMITTIVITY; STRUCTURAL ANALYSIS; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

GERMANIUM;

EID: 67349083890     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.02.037     Document Type: Article

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