Physical and electrical characteristics of HfO2/Hf films deposited on silicon by atomic layer deposition

2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Volumn , Issue , 2007, Pages 357-360

  Do, Seung Woo ^a   Bae, Kun Ho ^a   Song, Byung Ho ^a   Lee, Jae Sung ^b   Lee, Yong Hyun ^a  

^a Kyungpook National University   (South Korea)

^b Uiduk University   (South Korea)

Author keywords

ALD (atomic layer deposition); Hf metal layer; HfO2; Interfacial layer; XPS (X ray photoelectron spectrometry)

Indexed keywords

HAFNIUM COMPOUNDS; NANOTECHNOLOGY;

ALD (ATOMIC LAYER DEPOSITION); ELECTRICAL CHARACTERISTICS; HF METAL LAYER; HFO2; INTERFACIAL LAYER; INTERNATIONAL CONFERENCES; XPS (X-RAY PHOTOELECTRON SPECTROMETRY);

TECHNOLOGY;

EID: 52949103726     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2007.4601208     Document Type: Conference Paper

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