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Volumn 9, Issue 2 SUPPL., 2009, Pages
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Post annealing effect on ultra-thin Hf-based high-k gate oxides on Si
a,b
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Author keywords
Annealing; Band gap; Hf based gate oxide; High k; Leakage current
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Indexed keywords
ANNEALING PROCESS;
AS-GROWN;
ATOMIC LAYER DEPOSITED;
BAND GAP;
BAND GAPS;
DEPTH PROFILE;
FOWLER-NORDHEIM;
GATE OXIDE FILMS;
HF-BASED GATE OXIDE;
HIGH-K;
HIGH-K GATE OXIDE;
LEAKAGE CONDUCTION;
POOLE-FRENKEL;
POST ANNEALING;
POST-ANNEALING EFFECT;
SURFACE AND INTERFACES;
ULTRA-THIN;
ANNEALING;
ELECTRIC FIELDS;
ENERGY GAP;
GATES (TRANSISTOR);
HAFNIUM;
HAFNIUM COMPOUNDS;
MOS DEVICES;
SPECTROSCOPIC ELLIPSOMETRY;
OXIDE FILMS;
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EID: 67349258508
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2008.12.040 Document Type: Article |
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Times cited : (9)
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References (12)
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