Aggressively scaled ultrathin undoped HfO2 gate dielectric (EOT < 0.7 nm) with tan gate electrode using engineered interface layer

IEEE Electron Device Letters

Volumn 26, Issue 7, 2005, Pages 454-457

  Choi, Changhwan ^a   Kang, Chang Yong ^a   Rhee, Se Jong ^a   Akbar, Mohammad Shahariar ^a   Krishnan, Siddarth A ^a   Zhang, Manhong ^a   Kim, Hyoung Sub ^a   Lee, Tackhwi ^a   Ok, Injo ^a   Zhu, Feng ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

HfO2; Low k interface layer; Oxygen scavenging; Scalability

Indexed keywords

ANNEALING; DIELECTRIC DEVICES; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDATION; SURFACE REACTIONS; ULTRATHIN FILMS;

GATE DIELECTRIC; OXYGEN SCAVENGING; SCALABILITY;

MOSFET DEVICES;

EID: 22944453680     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.851240     Document Type: Article

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