Ab initio study of high permittivity phase stabilization in HfSiO

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2039-2042

  Fischer, D ^a   Kersch, A ^a  

^a QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

ab initio; Dielectric constant; Doping; HfO2; High k dielectric; Phase stabilization

Indexed keywords

COMPUTER SIMULATION; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); PERMITTIVITY; SILICON; SPECTRUM ANALYSIS;

PHASE STABILIZATION; TETRAGONAL PHASES;

HAFNIUM COMPOUNDS;

EID: 34248649607     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.006     Document Type: Article

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