Time-dependent dielectric breakdown in poly-Si CVD HfO2 gate stack

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 409-414

  Lee, S J ^a   Lee, C H ^a   Choi, C H ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Acceleration; Capacitance voltage characteristics; Dielectric breakdown; Electrodes; Hafnium oxide; High K dielectric materials; Leakage current; Temperature; Tunneling; Voltage

Indexed keywords

ACCELERATION; CAPACITANCE; DEFECT DENSITY; DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON TUNNELING; GATES (TRANSISTOR); HAFNIUM OXIDES; LEAKAGE CURRENTS; LOGIC GATES; POLYCRYSTALLINE MATERIALS; RELIABILITY; SILICON; TEMPERATURE;

CAPACITANCE VOLTAGE CHARACTERISTIC; CRITICAL DEFECT DENSITY; CUMULATIVE IMPACTS; HIGH-K DIELECTRIC MATERIALS; POLY SI GATE ELECTRODE; RELIABILITY CHARACTERISTICS; TIME DEPENDENT DIELECTRIC BREAKDOWN; TUNNELING LEAKAGE CURRENT;

DIELECTRIC MATERIALS;

EID: 79952395995     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996671     Document Type: Conference Paper

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