Characteristic instabilities in HfAlO metal-insulator-metal capacitors under constant-voltage stress

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1359-1365

  Takeda, Kenichi ^a   Yamada, Renichi ^a   Imai, Toshirnori ^a   Fujiwara, Takashi ^a   Hashimoto, Takashi ^a   Ando, Toshi ^a  

^a HITACHI LTD   (Japan)

Author keywords

Capacitance density; Hafnium aluminate; Hafnium oxide; HfAlO; HfO; MIM capacitor; temperature coefficient of capacitance (TCC); Voltage linearity

Indexed keywords

CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC LOSSES; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; PERMITTIVITY;

CONSTANT-VOLTAGE STRESS (CVS); FREQUENCY COEFFICIENT OF CAPACITANCE (FCC); METAL-INSULATOR-METAL (MIM) CAPACITORS; TEMPERATURE COEFFICIENT OF CAPACITANCE (TCC);

CAPACITORS;

EID: 44949129934     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.921978     Document Type: Article

References (21)

1. 2 metal-insulator-metal capacitors for Si analog circuit applications" J. Appl. Phys., vol. 94, no. 1, pp. 551-557, Jul. 2003.
2. J. Babcock, S. Balster, A. Pinto, C. Dirnecker, P. Steinmann. R. Jumpertz, and B. El-Karch, "Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics," IEEE Electron Device Lett., vol. 22, no. 5, pp. 230-232, May 2001.
3. K. Shao, S. Chu, K. Chew, G. Wu, C. Ng, N. Tan, B. Shen, A. Yin, and Z. Zheng, "A sealeable metal-insulator-metal capacitors process for 0.35 to 0.18 μm analog and RFCMOS," in Proc. 6th int. Conf. Solid-State Integr.-Cicruits Technol., 2001, pp. 243-246.
4. 4 dielectric layers." IEEE Microw. Guided Wave Lett., vol. 9, no. 9, pp. 345-347, Sep. 1999.
5. 4 metal-insulator-metal (MIM) capacitors," IEEE Trans. Electron Devices, vol. 50, no. 4, 941-944, Apr. 2003.
6. G. D. Wilk, R. M. Wallace, and J. M. Anthony, "Hafnium and zirconium silicates for advanced gate dielectrics," J. Appl. Phys., Vol. 87, no. 1, pp. 484-492, Jan. 2000.
7. 2 on the physical and electrical properties of the dielectrics," IEEE Electron Device Lett., vol. 23, no. 11, pp. 649-651, Nov. 2002.
8. 2-based high-k gate dielectrics," in IEDM Tech. Dig, 2004, pp. 129-132.
9. O5, films" J. Appl. Phys. vol. 90, no. 3, pp. 1501-1508, Aug. 2001.
10. S. Becu, S. Cremer, and J.-L. Autran, "Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides," Appl. Phys. Lett., Vol. 88, no. 5, pp. 052902-052 904, Jan. 2006.
11. 3 laminate MIM capacitors for Si RFIC applications," IEEE Trans. Electron Devices, Vol. 51, no. 6, pp. 886-894, Jun. 2004.
12. 1-x)O MIM capacitors," in IEDM Tech. Dig., 2006, pp. 359-362.
13. A. K. Jonschier, "Dielectric relaxation in solids," J. Phys. D. Appl. Phys. vol. 32, no. 14, pp. R57-R70, Jul. 1999.
14. M. Gevers, "The relation between the power factor and the temperature coefficient of the dielectric constant of soild dielectrics," Philips Res. Rep., vol. 1, pp. 197-224, 1945.
15. A. Cockbain and P. Harrop, "The temperature coefficient of capacitance," J. Phys. D, Appl. Phys., vol. 1, no. 9, pp. 1109-1115, Sep. 1968.
16. 2, stack," in Proc. Int Rel. Phys. Symp., 2004, pp. 181-187.
17. K. Okada, T. Horikawa, H. Satake, H. Ota, A. Ogawa, T. Nabatame, and A. Toriumi, "Mechanism of gradual increase of gate current in high-k gate dielectrics and its application to reliability assessment," in Proc. Int. Rel. Phys. Symp., 2006, pp. 189-194.
18. 2 thin films," J. Appl. Phys., vol. 84, no. 3, pp. 1513-1523, Aug. 1998.
19. T. Yamaguchi, I. Hirano, R. Iijima, K. Sekine, M. Takayanagi, K. Eguchi, Y. Mitani, and N. Fukushima, "Thermochemical understanding of dielectric breakdown in HfSiON with current acceleration," in Proc. Int. Rel. Phys. Symp., 2005, pp. 67-74.
20. 2 equivalent thickness," in IEDM Tech. Dig., 2001, pp. 137-140.
21. Q. Li, K. M. Koo, W. M. Lau, P. F. Lee, J. Y. Dail, Z. F. Hou, and X. G. Gong, "Effects of A1 addition on the native defects in hafnia," Appl. Phys. Lett., Vol. 88, no. 18, p. 182 903, May 2006.