Growth of thick 4H-SiC epitaxial layers on on-axis Si-face substrates with HCl addition

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 93-96

  Leone, S ^a,b   Pedersen, H ^a   Henry, A ^a   Rao, S ^b   Kordina, O ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Caracal Inc   (United States)

Author keywords

Chlorine based chemical vapor deposition; High growth rate; On axis

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; EPITAXIAL GROWTH; ETHYLENE; SILICON CARBIDE; SUBSTRATES;

GROWTH CONDITIONS; GROWTH MECHANISMS; HIGH GROWTH RATE; HOMOEPITAXIAL GROWTH; HOMOEPITAXIAL LAYERS; HYDROGEN CHLORIDE; ON-AXIS; RAMP UP CONDITIONS;

GROWTH RATE;

EID: 77955325300     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.93     Document Type: Conference Paper

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