Concentrated chloride-based epitaxial growth of 4H-SiC

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 95-98

  Henry, A ^a   Leone, S ^a   Andersson, S ^a   Kordina, O ^a   Janzene E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Chloride based CVD; Concentrated growth; High growth rate

Indexed keywords

CHLORINE COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

CARRIER FLOW; CHLORIDE-BASED CVD; GROWTH CONDITIONS; HIGH GROWTH RATE; HYDROGEN CHLORIDE; PROCESS PRESSURE; SYSTEMATIC STUDY; THICKNESS UNIFORMITY;

GROWTH RATE;

EID: 77955449839     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.95     Document Type: Conference Paper

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