Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)

Physica Status Solidi - Rapid Research Letters

Volumn 2, Issue 4, 2008, Pages 188-190

  Pedersen, H ^a   Leone, S ^a,b   Henry, A ^a   Darakchieva, V ^a   Carlsson, P ^a   Gallstrom A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Caracal Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK GROWTH; FREE EXCITONS; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; HIGH-CRYSTALLINE QUALITY; LOW TEMPERATURE PHOTOLUMINESCENCE; METHYLTRICHLOROSILANE; NITROGEN-BOUND EXCITONS; PRECURSOR MOLECULES; ROCKING CURVES; SIC EPILAYERS; SINGLE PRECURSORS;

CHLORINE COMPOUNDS; CRYSTALLINE MATERIALS; EPILAYERS; EPITAXIAL GROWTH; EXCITONS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70449644747     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802081     Document Type: Article

References (16)

1. F. La Via, G. Galvagno, G. Foti, M. Mauceri, S. Leone, G. Pistone, G. Abbondanza, A. Veneroni, M. Masi, G. L. Valente, and D. Crippa, Chem. Vapor Depos. 12, 509 (2006).
2. P. Lu, J. H. Edgar, O. J. Glembocki, P. B. Klein, E. R. Glaser, J. Perrin, and J. Chaudhuri, J. Cryst. Growth 285, 506 (2005).
3. S. Leone, M. Mauceri, G. Pistone, G. Abbondanza, F. Portuese, G. Abagnale, G. L. Valente, D. Crippa, M. Barbera, R. Reitano, G. Foti, and F. La Via, Mater. Sci. Forum 527-529, 179 (2006).
4. G. Dhanaraj, M. Dudley, Y. Chen, B. Ragothamachar, B. Wu, and H. Zhang, J. Cryst. Growth 287, 344 (2006).
5. H. Pedersen, S. Leone, A. Henry, F. C. Beyer, V. Darakchieva, and E. Janzén, J. Cryst. Growth 307, 334 (2007).
6. Y. Koshka, H.-D. Lin, G. Melnychuk, and C. Wood, J. Cryst. Growth 294, 260 (2006)
7. M. Fanton, M. Skowronski, D. Snyder, H. J. Chung, S. Nigam, B. Weiland, and S. W. Huh, Mater. Sci. Forum 457-460, 87 (2004).
8. H. J. Chung, A. Y. Polyakov, S. W. Huh, S. Nigam, M. Skowronski, M. A. Fanton, B. E. Weiland, and D. W. Snyder, J. Appl. Phys. 97, 084913 (2005).
9. M. Fanton, D. Snyder, B. Weiland, R. Cavalero, A. Polyakov, M. Skowronski, and H. Chung, J. Cryst. Growth 287, 359 (2006).
10. H. Pedersen, S. Leone, A. Henry, F. C. Beyer, V. Darakchieva, and E. Janzén, presented at the International Conference on Silicon Carbide and Related Materials 2007, Otsu, Japan, 2007, proceedings to be published in Mater. Sci. Forum (2008).
11. A. Henry, J. Hassan, J. P. Bergman, C. Hallin, and E. Janzén, Chem. Vapor Depos. 12, 475 (2006)
12. I. G. Ivanov, C. Hallin, A. Henry, O. Kordina, and E. Janzén, J. Appl. Phys. 80 (6), 3504 (1996).
13. M. Syväjärvi, R. Yakimova, H. Jacobsson, and E. Janzén, J. Appl. Phys. 88 (3), 1407 (2000).
14. N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, and E. Janzén, Mater. Sci. Forum 433-436, 45 (2003).
15. N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, and E. Janzén, Mater. Sci. Forum 457-460, 437 (2004).
16. B. Magnusson and E. Janzén, Mater. Sci. Forum 483-485, 341 (2005).