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Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 107-110

Chloride-based CVD at high growth rates on 3″ vicinal off-angles SiC wafers

(4) Leonea, S a Henry, A a Kordina, O a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

Bulk growth; Chloride based CVD; High growth rate; On axis

Indexed keywords

CHLORINE COMPOUNDS; FLOW OF GASES; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

BULK GROWTH; BULK GROWTH TECHNIQUES; CHLORIDE-BASED CVD; HIGH GROWTH RATE; HYDROGEN CHLORIDE; LOWER TEMPERATURES; ON-AXIS; PROCESS TEMPERATURE;

GROWTH RATE;

EID: 77955439746 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.645-648.107 Document Type: Conference Paper

Times cited : (6)

References (11)

1
- 61449206509
- doi:10.1002/pssr.200802183
- H. Pedersen, S. Leone, A. Henry, A. Lundskog, and E. Janzén: Physica status solidi. Rapid research letters Vol. 2 (2008), p. 278 doi:10.1002/pssr.200802183.
- (2008) Physica Status Solidi. Rapid Research Letters , vol.2 , pp. 278
- Pedersen, H.¹ Leone, S.² Henry, A.³ Lundskog, A.⁴ Janzén, E.⁵

2
- 63849267245
- doi:10.4028/www.scientific.net/MSF.600-603.107
- S. Leone, H. Pedersen, A. Henry, O. Kordina, and E. Janzén: Mat. Sci. Forum Vol. 600-603 (2009), p. 107 doi:10.4028/www.scientific.net/MSF.600- 603.107.
- (2009) Mat. Sci. Forum , vol.600-603 , pp. 107
- Leone, S.¹ Pedersen, H.² Henry, A.³ Kordina, O.⁴ Janzén, E.⁵

3
- 33847510976
- doi:10.1016/0022-0248(78)90169-0
- Yu. M. Tairov and V.F. Tsvetkov: J. Cryst. Growth Vol. 43, (1978), p. 209 doi:10.1016/0022-0248(78)90169-0.
- (1978) J. Cryst. Growth , vol.43 , pp. 209
- Tairov, Yu.M.¹ Tsvetkov, V.F.²

4
- 0001608765
- doi:10.1063/1.117613
- O. Kordina, C. Hallin, A. Ellison, S. Bakin, I.G. Ivanov, A. Henry, R. Yakimova, M. Tuominen, A. Vehanen and E. Janzén: Appl. Phys. Lett. Vol. 69 (1996), p. 1456. doi:10.1063/1.117613.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1456
- Kordina, O.¹ Hallin, C.² Ellison, A.³ Bakin, S.⁴ Ivanov, I.G.⁵ Henry, A.⁶ Yakimova, R.⁷ Tuominen, M.⁸ Vehanen, A.⁹ Janzén, E.¹⁰

5
- 49749120988
- doi:10.1016/j.jcrysgro.2008.06.027
- M.A. Fanton, B.E. Weiland, J.M. Redwing: J. Cryst. Growth Vol. 310 (2008), p. 4088 doi:10.1016/j.jcrysgro.2008.06.027.
- (2008) J. Cryst. Growth , vol.310 , pp. 4088
- Fanton, M.A.¹ Weiland, B.E.² Redwing, J.M.³

6
- 0031515378
- SiC Seeded Crystal Growth
- DOI 10.1002/1521-3951(199707)202:1<149::AID-PSSB149>3.0.CO;2-M, Fundamental Questions and Applications of SiC (Part I)
- R. C. Glass, D. Henshall, V. F. Tsvetkov and C. H. Carter: Phys. Stat. Sol. (b) Vol. 202 (1997), p. 149 doi:10.1002/1521-3951(199707)202:1<149::AID- PSSB149>3.0.CO;2-M. (Pubitemid 127092909)
- (1997) Physica Status Solidi (B) Basic Research , vol.202 , Issue.1 , pp. 149-162
- Glass, R.C.¹ Henshall, D.² Tsvetkov, V.F.³ Carter, C.H.⁴

7
- 52149108918
- doi:10.1016/j.jcrysgro.2008.06.081
- J. Hassan, J.P. Bergman, A. Henry, E. Janzén: J. Cryst. Growth Vol. 310 (2008), p. 4424 doi:10.1016/j.jcrysgro.2008.06.081.
- (2008) J. Cryst. Growth , vol.310 , pp. 4424
- Hassan, J.¹ Bergman, J.P.² Henry, A.³ Janzén, E.⁴

8
- 0037110211
- I. Kamata, H. Tsuchida, T. Jikimoto and K. Izumi: Jpn. J. Appl. Phys. Vol. 41 (2002), p. L 1137.
- (2002) Jpn. J. Appl. Phys. , vol.41
- Kamata, I.¹ Tsuchida, H.² Jikimoto, T.³ Izumi, K.⁴

9
- 0035365946
- Surface step model for micropipe formation in SiC
- DOI 10.1016/S0022-0248(01)01387-2, PII S0022024801013872
- N. Ohtani, M. Katsuno, T. Fujimoto, T. Aigo and H. Yashiro: J. Cryst. Growth Vol. 226 (2001), p. 254 doi:10.1016/S0022-0248(01)01387-2. (Pubitemid 32544423)
- (2001) Journal of Crystal Growth , vol.226 , Issue.2-3 , pp. 254-260
- Ohtani, N.¹ Katsuno, M.² Fujimoto, T.³ Aigo, T.⁴ Yashiro, H.⁵

10
- 57049170882
- doi:10.1143/APEX.1.015001
- M. Ito, L. Storasta and H. Tsuchida: Appl. Phys. Express Vol. 1 (2008), p. 015001 doi:10.1143/APEX.1.015001.
- (2008) Appl. Phys. Express , vol.1 , pp. 015001
- Ito, M.¹ Storasta, L.² Tsuchida, H.³

11
- 0001448363
- doi:10.1063/1.363221
- I. G. Ivanov, C. Hallin, A. Henry, O. Kordina and E. Janzén: J. of Appl. Phys. Vol. 80 (6) (1996), p. 3504 doi:10.1063/1.363221.
- (1996) J. of Appl. Phys. , vol.80 , Issue.6 , pp. 3504
- Ivanov, I.G.¹ Hallin, C.² Henry, A.³ Kordina, O.⁴ Janzén, E.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.