Crystallographic defects under surface morphological defects of 4H-SiC homoepltaxial films

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 521-524

  Okada, T ^a   Kimoto, T ^b   Yamai, K ^a   Matsunami, H ^b   Inoko, F ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

4H SiC; Crystallographlc defect; Homoepitaxy; Surface morphological defect; Transmission electron microscopy (TEM)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; MORPHOLOGY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; TRIANGULATION;

4H-SIC; CRYSTALLOGRAPHIC DEFECTS; HOMOEPITAXY; SURFACE MORPHOLOGICAL DEFECT;

SILICON CARBIDE;

EID: 8644226128     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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