The effect of geometrical nonuniformity on electrical characteristics of ZnO varistors with Al2O3 dopant

Conference on Electrical Insulation and Dielectric Phenomena (CEIDP), Annual Report

Volumn , Issue , 2001, Pages 63-66

  Han, S W ^a   Cho, H G ^a  

^a Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GRAIN GROWTH; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; ZINC OXIDE;

HETEROGENEOUS MICROSTRUCTURE SYSTEMS;

VARISTORS;

EID: 0035186727     PISSN: 00849162     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. Single junction in ZnO varistors studied by current-voltage characteristics and deep level transient spectroscopy
2. Nonohmic properties of zinc oxide ceramics
3. Microstrctures and phase transformation in a highly non-ohmic metal oxide varistor ceramic
4. Microstructure characteristics of ZnO varistors simulated by voronoi network
5. 3 additions