Temperature-dependent characteristics of an Al0.2Ga0.8As/In0.22Ga0.78As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 2, 2003, Pages 760-762

  Li, Yih Juan ^a   Hsu, Wei Chou ^a   Wang, Sheng Yung ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; THERMAL EFFECTS; THRESHOLD VOLTAGE;

PURIFIED SOLIDS;

GATES (TRANSISTOR);

EID: 0037274172     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. J. L. Evans, C. S. Romanczuk, L. E. Bosley, and R. W. Johnson, Proc. Second Int. High-temperature Conf. 1, 3 (1994).
2. J. C. Ereskine, R. G. Carter, J. A. Hearn, H. L. Fields, and J. M. Himeliek, Proc. Second Int. High-temperature Conf. 1, 9 (1994).
3. S. J. Cloyd, Proc. Second Int. High-temperature Conf. 1, 27 (1994).
4. K. Nishii, M. Nishitsuji, T. Uda, T, Yokoyama, S. Yamamoto, T. Kunihisa, and A. Tamura, 1997 IEEE International Symposium on Compound Semiconductors, 1998, p. 487.
5. D. Look, Electrical Characterization of GaAs Materials and Devices (Wiley, New York, 1989).
6. R. Lee, G. Trombley, B. Johnson, R. Reston, M. Mah, C. Havasy, and C. Ito, IEEE Electron Device Lett. 16, 265 (1995).
7. R. Narasimhan, L. P. Sadwick, and Ruey J. Hwu, IEEE Trans. Electron Devices 46, 24 (1999).
8. J. Dickmans, S. Schildberg, K. Riepe, B. E. Maile, A. Schurr, A. Geyer, and P. Narozny, Jpn. J. Appl. Phys., Part 1 34, 66 (1995).
9. J. Dickmans, S. Schildberg, K. Riepe, B. E. Maile, A. Schurr, A. Geyer, and P. Narozny, Jpn. J. Appl. Phys., Part 1 34, 1805 (1995).