High-Speed 1.3-μm p-i-n GaNAsSb/GaAs waveguide photodetector

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 704-706

  Zegaoui, M ^a   Xu, Z ^b   Saadsaoud, N ^a   Tan, K H ^b   Loke, W K ^b   Wicaksono, S ^b   Yoon, S F ^b   Legrand, C ^a   Decoster, D ^a   Chazelas, J ^c  

^a INSTITUT D ELECTRONIQUE   (France)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c TAS   (France)

Author keywords

Cutoff frequency; dilute nitride; GaNAsSb; waveguide photodetector (WGPD)

Indexed keywords

CLADDING LAYER; CORE LAYERS; DETECTION WAVELENGTHS; DILUTE NITRIDES; GAAS; GANASSB; HIGH-SPEED; RECORD VALUES; WAVEGUIDE PHOTODETECTORS;

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; WAVEGUIDES;

CUTOFF FREQUENCY;

EID: 77954142957     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2049563     Document Type: Article

References (11)

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