GSMBE growth of InP-based MSM/HEMT OEIC structures

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 303-306

  Chen, Jianxin ^a   Li, Aizhen ^a   Chen, Yiqiao ^a   Yang, Quankui ^a   Chen, Xiaojie ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Phosphides; B3. Optical fiber devices

Indexed keywords

ETCHING; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); INDIUM ALUMINUM ARSENIDE; METAL SEMICONDUCTOR METAL PHOTODETECTORS (MSM-PD);

INTEGRATED OPTOELECTRONICS;

EID: 0035398156     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00710-2     Document Type: Conference Paper

References (5)