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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 7 A, 2003, Pages 4253-4256

Off-state breakdown modeling for high-Schottky-barrier δ-doped In0.49Ga0.51P/In0.25Ga0.75As/InP high electron mobility transistor

(2) Lee, Ching Sung a Hsu, Wei Chou b

a FENG CHIA UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

HEMT; Impact ionization; Off state breakdown modeling; Self consistent method; Thermionic field emission

Indexed keywords

CALCULATIONS; COMPUTER AIDED DESIGN; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; IMPACT IONIZATION; MATHEMATICAL MODELS; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING;

OFF STATE BREAKDOWN MODELING; SELF CONSISTENT METHOD; THERMIONIC FIELD EMISSION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0141606654 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.4253 Document Type: Article

Times cited : (1)

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