AlGaN/GaN HEMT with a transparent gate electrode

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 439-441

  Pei, Yi ^a   Vampola, Kenneth J ^a   Chen, Zhen ^a   Chu, Rongming ^a   DenBaars, Steven P ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Gallium nitride; High electron mobility transistors (HEMTs); Indium tin oxide (ITO); Transparent

Indexed keywords

ACTIVE REGIONS; ALGAN/GAN HEMT; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CURRENT GAIN CUTOFF FREQUENCY; GATE DEVICES; GATE ELECTRODES; GATE TRANSISTORS; HIGH-ELECTRON-MOBILITY TRANSISTORS (HEMTS); INDIUM TIN OXIDE; INDIUM TIN OXIDE (ITO); LOW CONDUCTIVITY; ON/OFF RATIO; OPTICAL CHARACTERIZATION; POWER GAIN CUTOFF FREQUENCIES; SPECTROSCOPY TECHNOLOGY; TRANSPARENT;

CUTOFF FREQUENCY; ELECTRODES; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; PHOTOLITHOGRAPHY; REFRACTORY METAL COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; TIN; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67349086887     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2017282     Document Type: Article

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