On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 325-327

  Chen, Li Yang ^a   Chen, Huey Ing ^a   Cheng, Shiou Ying ^b   Chen, Tzu Pin ^a   Tsai, Tsung Han ^a   Liu, Yi Jung ^a   Huang, Yi Wen ^a   Huang, Chien Chang ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL ILAN UNIVERSITY   (Taiwan)

Author keywords

Electroless plated (EP); Enhancement mode (E mode); Pseudomorphic high electron mobility transistor (PHEMT)

Indexed keywords

ALGAAS/INGAAS/GAAS; DRAIN SATURATION CURRENTS; ELECTROLESS PLATED (EP); ENHANCEMENT-MODE (E-MODE); EXTRINSIC TRANSCONDUCTANCES; LOW COSTS; LOW TEMPERATURES; LOW-ENERGY CONDITIONS; METAL-SEMICONDUCTOR INTERFACES; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMT); PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR (PHEMTS);

DRAIN CURRENT; ELECTRON MOBILITY; ELECTRONS; RESONANT TUNNELING; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67349127530     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2014788     Document Type: Article

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