Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Ferrari, S ^a   Spiga, S ^a   Wiemer, C ^a   Fanciulli, M ^a   Dimoulas, A ^b  

^a LABORATORIO MDM   (Italy)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; DIFFUSION; HAFNIUM COMPOUNDS; OXYGEN;

HFO2; NITRIDATED GERMANIUM LAYERS; NITRIDATED INTERFACIAL LAYERS; OXYGEN RICH INTERFACIAL LAYERS;

GERMANIUM;

EID: 33748963472     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2349320     Document Type: Article

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