Impact of germanium related defects on electrical performance of hafnium oxide

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Sun, Qing Qing ^a   Shi, Yu ^a   Dong, Lin ^a   Liu, Han ^a   Ding, Shi Jin ^a   Zhang, David Wei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; GERMANIUM COMPOUNDS; HAFNIUM COMPOUNDS; MOSFET DEVICES; OXYGEN VACANCIES;

GATE LEAKAGE; GERMANIUM RELATED DEFECTS; NEGATIVE CHARGE;

CRYSTAL DEFECTS;

EID: 40849136419     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2883944     Document Type: Article

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