Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications

Solid-State Electronics

Volumn 52, Issue 1, 2008, Pages 25-30

  Kabra, Sneha ^a   Kaur, Harsupreet ^a   Haldar, Subhasis ^b   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

GaN MESFET; Transconductance; Wide band gap semiconductors

Indexed keywords

GALLIUM NITRIDE; MATHEMATICAL MODELS; MICROWAVE FREQUENCIES; PARAMETER ESTIMATION; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

GAN MESFET; TEMPERATURE DEPENDENT ANALYTICAL MODELS; TEMPERATURE DEPENDENT MATERIAL PARAMETERS; WIDE BAND GAP SEMICONDUCTORS;

MESFET DEVICES;

EID: 36248995246     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.06.010     Document Type: Article

References (31)

1. Sze S.M. Physics of semiconductor devices. 2nd ed. (1981), Wiley, NewYork
2. Hassanuzzamam Md., Islam S.K., and Tolbert L.M. Effects of temperature variation (300-600 K) in MOSFET modeling in 6 H-silicon carbide. Solid State Electron 48 (2004) 125-132
3. Caddemi A., Crupi G., and Donato N. Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs. Microelectron Reliab 46 (2006) 169-173
4. Rebello N.S., Shoucair F.S., and Palmour. 6H silicon carbide MOSFET modeling for high temperature analogue integrated circuits (25-500°C). IEE Circuit Dev Sys 143 (1996) 115-122
5. Pearton S.J., Zolpher J.C., Shul R.J., and Ren F. GaN: processing defects and devices. J Appl Phys 86 (1999) 1-78
6. Binari S.C., Doverspike K., Kelner G., Dietrich H.B., and Wickenden A.E. GaN FETs for microwave and high temperature applications. Solid State Electron 41 (1997) 177-180
7. Lee W.S., Choi Y.H., Chung K.W., Moon D.C., and Shin M.W. High temperature performance of recessed gate GaN MESFETs fabricated using photo electrochemical etching process. Electron Lett 36 (2000) 265-267
8. Yoshida S., Li J., Takehara H., and Wada T. Formation of thin GaN layer on Si(1 1 1) for fabrication of high temperature metal field effect transistors. J Cryst Growth 253 (2003) 85-88
9. Yoshida S., and Suzuki J. High temperature reliability of GaN metal semiconductor field effect transistor and bipolar junction transistor. J Appl Phys 85 (1999) 7931-7934
10. Yoshida S., and Suzuki J. Reliability of metal semiconductor field effect transistor using GaN at high temperature. J Appl Phys 84 (1998) 2940-2942
11. Shur MS, Gaska R, Khan A, Simin G. Wide band gap electronic devices (keynote). In: Fourth IEEE international caracas conference on devices, circuits and systems, Aruba; 2002, p. D051-1-7.
12. Oxley C.H., and Buiu O. Comparison of wide band gap and III-V semiconductor devices. Microwave Eng (Europe) (2000) 41-47
13. Islam S.S., and Anwar A.F.M. Self heating and trapping effects on the rf performance of GaN MESFETs. IEEE T Microw Theory 52 (2004) 1229-1236
14. Farahmand M., Weber M., Tirino L., Brennan K.F., and Ruden P.P. Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zinc-blende-phase MESFETs (metal-semiconductor field-effect transistors). J Phys-conden Mat 13 (2001) 10477-10486
15. Kabra S., Kaur H., Gupta R., Haldar S., Gupta M., and Gupta R.S. A semi empirical approach for submicron gan mesfet using an accurate velocity field relationship for high power applications. Microelectron J 37 (2006) 620-626
16. Farahmand M., and Brennan K.F. Full band monte carlo simulation of zinc blende gan mesfet's including realistic impact ionization rates. IEEE T Electron Dev 46 (1999) 1319-1325
17. Guoa B., Ravaiolib U., and Songc D. Properties of awurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach. Microelectron J 35 (2004) 117-123
18. Lee C., Lu W., Piner E., and Adesida I. DC and microwave performance of recessed - gate GaN MESFETs using ICP-RIE. Solid State Electron 46 (2002) 743-746
19. Lee C,Lu W, Piner E, Adesida I. Recessed - gate GaN MESFETs using ICP-RIE for high temperature applications. Device research conference 2000, Conference digest 58th device research conference, p. 41-2.
20. McNally P.J., and Daniels B. Compact DC model for submicron GaAs MESFETs including gate-source modulation effects. Microelectron J 32 (2001) 249-251
21. Kacprzak T., and Materka A. Compact DC Model of GaAs FETs for large-signal computer calculation. IEEE J Solid State Ciruit 18 (1983) 211-213
22. Son C.S., Ahn H., Han D.Y., and Nokali M.A.E. D.C. characteristics of MESFETs at high temperatures. Solid State Electron 43 (1999) 537-542
23. Schmitz A.C., Ping A.T., Khan M.A., Chen Q., Yang J.W., and Adesida I. Schottky metal properties of various metals on n-type GaN. Semicond Sci Technol 11 (1996) 1464-1467
24. Bunea G.E., Dunham S.T., and Moustakas T.D. Modeling of a GaN based static induction transistor. MRS Internet J N S R 4S1 (1999) G6.41
25. Li Y., Lu Y., Shen H., Wraback M., Brown M.G., Schurman M., et al. Temperature dependence of energy gap in GaN thin film studied by thermomodulation. Appl Phys Lett 70 (1997) 2458-2460
26. Teisseyre H., Perlin P., Suski T., Grzegory I., Porowski S., Jun J., et al. Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer. J Appl Phys 76 4 (1994) 2429-2434
27. Zubrilov A. In: Levinshtein M.E., Rumyantsev S.L., and Shur M.S. (Eds). Properties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe (2001), John Wiley & Sons, Inc., New York 49-66
28. Pearton P.J. GaN and related materials. Optoelectronic properties of semiconductors and superlattices vol. 2 (1997), Gordon and Breach Science Publishers
29. Albrecht J.D., Wang R.P., Ruden P.P., Farahmand M., and Brennan K.F. Electron transport characteristics of GaN for high temperature device modeling. J Appl Phys 83 (1998) 4777-4781
30. Mnatsakanov T.T., Levinshtein M.E., Pomortseva L.I., Yurkov S.N., Simin G.S., and Khan M.A. Carrier mobility model for GaN. Solid State Electron 47 (2003) 111-115
31. Trassaert S., Boudart B., Gaquiere C., Theron D., Crosniere Y., Huet F., et al. Trap effect studies in GaN MESFETs by pulsed measurements. Electron Lett 35 (1999) 1386-1388