GaN schottky diodes for microwave power rectification

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Takahashi, Kensuke ^a   Ao, Jin Ping ^a   Ikawa, Yusuke ^a   Hu, Cheng Yu ^a   Kawai, Hiroji ^b   Shinohara, Naoki ^c   Niwa, Naoki ^d   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b POWDEC K K   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d KAJIMA TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; DOPING LEVELS; FIELD PLATES; LATERAL STRUCTURES; MATERIAL CHARACTERISTICS; MICROWAVE POWER; ON-RESISTANCE; REVERSE CHARACTERISTICS; RF MEASUREMENTS; SCHOTTKY DIODES; SEMI-INSULATING; SILICON CARBIDE SUBSTRATES; SURFACE ETCHING; TURN ON VOLTAGE;

DIODES; ELECTRIC RECTIFIERS; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROWAVE GENERATION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON WAFERS;

MICROWAVE POWER TRANSMISSION;

EID: 77952476047     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C095     Document Type: Article

References (5)

1. W. C. Brown: IEEE Trans Microwave Theory Tech. 32 (1984) 1230.
2. K. Honjo, R. Ishikawa, T. Yoshida, and C. Zheng: Ext. Abtr. Solid State Devices and Materials, 2007, p. 298.
3. B. Strassner and C. Kai: IEEE Trans. Microwave Theory Tech. 50 (2002) 1870.
4. J. P. Ao, D. Kikuta, N. Kubota, Y. Naoi, and Y. Ohno: IEEE Electron Device Lett. 24 (2003) 500.
5. S. Hashimoto, Y. Yoshizumi, T. Tanabe, and M. Kiyama: J. Cryst. Growth 298 (2007) 871.