Enhancing the light extraction efficiency of blue semipolar (101̄1̄) nitride-based light emitting diodes through surface patterning

Japanese Journal of Applied Physics

Volumn 48, Issue 3, 2009, Pages 030201-

  Zhong, Hong ^a   Tyagi, Anurag ^a   Pfaff, Nathan ^a   Saito, Makoto ^a   Fujito, Kenji ^a,b   Speck, James S ^a   Denbaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; DRIVE CURRENTS; ETCHING MASKS; GAN SUBSTRATE; ICP ETCHING; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; MULTIPLE QUANTUM WELLS; NON-EQUILIBRIUM PROCESS; NON-POLAR; OUTPUT POWER; SEMIPOLAR; SURFACE PATTERNING;

CHIP SCALE PACKAGES; EPITAXIAL LAYERS; ETCHING; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; PHYSICAL OPTICS; SEMICONDUCTING GALLIUM; SUBSTRATES; WATER ANALYSIS;

LIGHT EMITTING DIODES;

EID: 67650828639     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.030201     Document Type: Article

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