The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact

Chinese Physics B

Volumn 18, Issue 4, 2009, Pages 1614-1617

  Fang, Liu ^a   Tao, Wang ^a   Bo, Shen ^b   Sen, Huang ^b   Fang, Lin ^b   Nan, Ma ^b   Fu Jun, Xu ^b   Peng, Wang ^a   Jian Quan, Yao ^a  

^a TIANJIN UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

Gate leakage current; Interface states; Thermionic field emission current; Tunnelling current

Indexed keywords

CURRENT MECHANISMS; GATE LEAKAGE CURRENT; HETEROSTRUCTURE; HIGH TEMPERATURE; I - V CURVE; INSULATOR LAYER; INTERFACE STATE; INTERFACE STATES; REVERSE-BIAS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMIONIC FIELD EMISSION; THERMIONIC FIELD EMISSION CURRENT; TUNNELLING CURRENT;

DIODES; ELECTRIC POTENTIAL; FIELD EMISSION; GALLIUM; LEAKAGE CURRENTS; MOS CAPACITORS; OXYGEN; SCHOTTKY BARRIER DIODES; TUNNELING (EXCAVATION); WIND TUNNELS;

ALUMINUM;

EID: 67650763767     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/4/054     Document Type: Article

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