12.88W/mm GaN high electron mobility transistor on silicon substrate for high voltage operation

Applied Physics Express

Volumn 2, Issue 6, 2009, Pages

  Hoshi, Shinichi ^a   Itoh, Masanori ^a   Marui, Toshiharu ^a   Okita, Hideyuki ^a   Morino, Yoshiaki ^a   Tamai, Isao ^a   Toda, Fumihiko ^a   Seki, Shohei ^a   Egawa, Takashi ^b  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE METHOD; EPITAXIAL STRUCTURE; EPITAXIAL WAFERS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH-VOLTAGE OPERATION; INTERFACE LAYER; OUTPUT POWER DENSITY; PARASITIC LOSS; RF DEVICES; SI SUBSTRATES; SILICON SUBSTRATES; THERMAL RESISTANCE;

DC GENERATORS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; RESONANT TUNNELING; SECONDARY BATTERIES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS;

SUBSTRATES;

EID: 67949088269     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.061001     Document Type: Article

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