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Volumn 48, Issue 4 PART 2, 2009, Pages

AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance

(8) Visalli, Domenica a,b Van Hove, Marleen a Derluyn, Joff a Degroote, Stefan a Leys, Maarten a Cheng, Kai a,b Germain, Marianne a Borghs, Gustaaf a,b

a IMEC (Belgium)

b UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINIUM CONCENTRATION; BREAKDOWN VOLTAGE; DOUBLE HETEROSTRUCTURES; FIELD PLATES; GATE DRAIN; HIGH BREAKDOWN VOLTAGE; LINEAR DEPENDENCY; ON-RESISTANCE; SILICON SUBSTRATES;

ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

FIELD EFFECT TRANSISTORS;

EID: 77950069377 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.04C101 Document Type: Article

Times cited : (84)

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