One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells

Semiconductor Science and Technology

Volumn 26, Issue 2, 2011, Pages

  Dussaigne, A ^a   Corfdir, P ^a   Levrat, J ^a   Zhu, T ^a   Martin, D ^a   Lefebvre, P ^a,b   Ganiere J D ^a   Butte R ^a   Deveaud Pledran B ^a   Grandjean, N ^a   Arroyo, Y ^a   Stadelmann, P ^a  

^a EPFL   (Switzerland)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; BASAL PLANE STACKING FAULTS; BULK MATERIALS; EMISSION ANISOTROPY; EMISSION LINES; EPITAXIAL LATERAL OVERGROWTH; EXCITON LUMINESCENCE; EXTENDED DEFECT; GAN TEMPLATE; HETEROSTRUCTURES; M-PLANE; NON-POLAR; POTENTIAL FLUCTUATIONS; QUALITATIVE MODEL; QUANTUM WELL; QUANTUM WIRES; SINGLE QUANTUM WELL; SPATIAL EXTENSION; TEMPERATURE DEPENDENCE;

DEFECTS; EPITAXIAL GROWTH; EXCITONS; GALLIUM NITRIDE; LUMINESCENCE; OPTICAL PROPERTIES; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS; STACKING FAULTS;

ALUMINUM;

EID: 79751492257     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/2/025012     Document Type: Article

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