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Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 127-132

Scale effects on exciton localization and nonradiative processes in GaN/AlGaN quantum wells

(10) Gallart, M a Morel, A a Taliercio, T a Lefebvre, P a Gil, B a Allegre J a Mathieu, H a Grandjean, N b Leroux, M b Massies, J b

a UNIV MONTPELLIER (France)

b CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ATOMS; CHARGE TRANSFER; ELECTRONS; EXCITONS; HOLE TRAPS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; VARIATIONAL TECHNIQUES;

ENVELOPE FUNCTION APPROXIMATION; EXCITON ENERGIES; EXCITON LOCALIZATION; LOCALIZATION EFFECTS; NONRADIATIVE INTERWELL CARRIER TRANSFER; NONRADIATIVE PROCESSES; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0000519814 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200007)180:1<127::AID-PSSA127>3.0.CO;2-Z Document Type: Article

Times cited : (46)

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