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Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

(8) Teisseyre, H a,b Kaminska A b Franssen, G a,d Dussaigne, A c Grandjean, N c Grzegory, I a Ucznik, B a Suski, T a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b INSTITUTE OF PHYSICS (Poland)

c EPFL (Switzerland)

d TNO (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA-MOLECULAR-BEAM EPITAXIES; CRYSTALLOGRAPHIC DIRECTIONS; ELECTRIC FIELD MAGNITUDES; ENERGY POSITIONS; HIGH QUALITIES; MULTI-QUANTUM WELLS; NON-POLAR; PHOTOLUMINESCENCE SPECTRUM; PRESSURE SHIFTS; QUANTITATIVE ANALYSIS; QUANTUM CONFINEMENT EFFECTS; QUANTUM STRUCTURES; QUANTUM-CONFINED STARK EFFECTS; RADIATIVE RECOMBINATIONS; RED SHIFTS;

CRYSTAL GROWTH; ELECTRIC FIELD EFFECTS; GALLIUM; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 63749103820 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3043888 Document Type: Article

Times cited : (24)

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