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Volumn 94, Issue 20, 2009, Pages

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

(9) Corfdir, P a Ristic J a Lefebvre, P a,b Zhu, T a Martin, D a Dussaigne, A a Ganire J D a Grandjean, N a Deveaud Pldran B a

a EPFL (Switzerland)

b UNIVERSITÉ MONTPELLIER 2 (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; BAND ALIGNMENTS; BASAL STACKING FAULTS; CAPTURE RATE; DIFFUSION MODEL; EPITAXIAL LATERAL OVERGROWTH; EXCITON DYNAMICS; HOPPING PROCESS; LOCAL DENSITY; LOW TEMPERATURES; MULTI-EXPONENTIAL DECAY; NEUTRAL DONOR; RECOMBINATION MECHANISMS; RISETIME; TIME-RESOLVED; WURTZITE GAN;

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; EXCITONS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

STACKING FAULTS;

EID: 65949100607 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3142396 Document Type: Article

Times cited : (48)

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