M-plane GaN grown on m-plane sapphire by hydride vapor phase epitaxy

Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

  Zhu, Tiankai ^a   Martin, Denis ^a   Grandjean, Nicolas ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTAL GROWTH; CRYSTAL ORIENTATION; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; VAPORS;

ATOMIC FORCES; GAN EPILAYERS; HYDRIDE VAPOR PHASE EPITAXIES; IN-SITU; LOW TEMPERATURES; NUCLEATION LAYERS; PLANE SAPPHIRES; RMS ROUGHNESS; SAPPHIRE SURFACES; SURFACE PREPARATIONS; THERMAL CLEANINGS;

GALLIUM ALLOYS;

EID: 60849091360     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.020226     Document Type: Article

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