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Volumn 107, Issue 4, 2010, Pages

Exciton recombination dynamics in a -plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence

(10) Corfdir, P a Lefebvre, P a,b Balet, L a Sonderegger, S a Dussaigne, A a Zhu, T a Martin, D a Ganire J D a Grandjean, N a Deveaud Pldran B a

a EPFL (Switzerland)

b UNIVERSITÉ MONTPELLIER 2 (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BASAL STACKING FAULTS; DECAY TIME; EXCITON DECAY; EXCITON DYNAMICS; EXCITON LOCALIZATION; EXCITON RECOMBINATION; LOCAL DENSITY; LOW TEMPERATURES; NON-POLAR; ONE-DIMENSIONAL SYSTEMS; PICOSECONDS; QUANTUM WELL; QUANTUM WIRES; SPATIAL DEPENDENCE; TEMPERATURE EVOLUTION; TIME-RESOLVED; TIME-RESOLVED PHOTOLUMINESCENCE; ZERO-DIMENSIONAL;

ALUMINUM; CATHODOLUMINESCENCE; GALLIUM NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; STACKING FAULTS; WIRE;

EXCITONS;

EID: 77749283702 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3305336 Document Type: Article

Times cited : (36)

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